V54C3256164VJE6 datasheet, PDF

V54C3256164VJE6: DescriptionSynchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54,; Categorystorage storage; File Size890KB，54 Pages; ManufacturerProMOS Technologies Inc; Environmental Compliance

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V54C3256164VJE6 Overview

Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54,

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Objectid	114799809
package instruction	TSOP, TSOP54,.46,32
Reach Compliance Code	compliant
Country Of Origin	Mainland China
ECCN code	EAR99
YTEOL	4
Maximum access time	5.4 ns
Maximum clock frequency (fCLK)	166 MHz
I/O type	COMMON
interleaved burst length	1,2,4,8
JESD-30 code	R-PDSO-G54
memory density	268435456 bit
Memory IC Type	SYNCHRONOUS DRAM
memory width	16
Number of terminals	54
word count	16777216 words
character code	16000000
Maximum operating temperature	70 °C
Minimum operating temperature
organize	16MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP
Encapsulate equivalent code	TSOP54,.46,32
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	8192
Continuous burst length	1,2,4,8,FP
Maximum standby current	0.005 A
Maximum slew rate	0.11 mA
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	GULL WING
Terminal pitch	0.8 mm
Terminal location	DUAL

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