Power Field-Effect Transistor, 1.9A I(D), 250V, 1.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, LCC-28
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Maker | International Rectifier （ Infineon ） |
| Parts packaging code | LCC |
| package instruction | CHIP CARRIER, S-CQCC-N28 |
| Contacts | 28 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 30 mJ |
| Configuration | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 250 V |
| Maximum drain current (ID) | 1.9 A |
| Maximum drain-source on-resistance | 1.5 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | S-CQCC-N28 |
| Number of components | 4 |
| Number of terminals | 28 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| Package shape | SQUARE |
| Package form | CHIP CARRIER |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 7.6 A |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | NO LEAD |
| Terminal location | QUAD |
| Maximum time at peak reflow temperature | 40 |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
| IRHQ57214SESCSPBF | IRHQ57214SESCS | |
|---|---|---|
| Description | Power Field-Effect Transistor, 1.9A I(D), 250V, 1.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, LCC-28 | Power Field-Effect Transistor, 1.9A I(D), 250V, 1.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, LCC-28 |
| Is it lead-free? | Lead free | Contains lead |
| Is it Rohs certified? | conform to | incompatible |
| Maker | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） |
| Parts packaging code | LCC | LCC |
| package instruction | CHIP CARRIER, S-CQCC-N28 | CHIP CARRIER, S-CQCC-N28 |
| Contacts | 28 | 28 |
| Reach Compliance Code | compliant | compliant |
| ECCN code | EAR99 | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 30 mJ | 30 mJ |
| Configuration | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 250 V | 250 V |
| Maximum drain current (ID) | 1.9 A | 1.9 A |
| Maximum drain-source on-resistance | 1.5 Ω | 1.5 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | S-CQCC-N28 | S-CQCC-N28 |
| Number of components | 4 | 4 |
| Number of terminals | 28 | 28 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | 150 °C |
| Package body material | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| Package shape | SQUARE | SQUARE |
| Package form | CHIP CARRIER | CHIP CARRIER |
| Peak Reflow Temperature (Celsius) | 260 | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 7.6 A | 7.6 A |
| Certification status | Not Qualified | Not Qualified |
| surface mount | YES | YES |
| Terminal form | NO LEAD | NO LEAD |
| Terminal location | QUAD | QUAD |
| Maximum time at peak reflow temperature | 40 | NOT SPECIFIED |
| transistor applications | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON |
| Base Number Matches | 1 | 1 |
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