MXLPLAD30KP85A datasheet, PDF - EEWORLD Datasheet

MXLPLAD30KP85A: DescriptionTrans Voltage Suppressor Diode, 30000W, 85V V(RWM), Unidirectional, 1 Element, Silicon; CategoryDiscrete semiconductor diode; File Size415KB，6 Pages; ManufacturerMicrochip; Websitehttps://www.microchip.com

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Trans Voltage Suppressor Diode, 30000W, 85V V(RWM), Unidirectional, 1 Element, Silicon

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Microchip
package instruction	S-PSSO-G1
Reach Compliance Code	compli
ECCN code	EAR99
Other features	HIGH RELIABILITY
Maximum breakdown voltage	104 V
Minimum breakdown voltage	94.4 V
Breakdown voltage nominal value	99.2 V
Shell connection	CATHODE
Maximum clamping voltage	137 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	S-PSSO-G1
JESD-609 code	e0
Humidity sensitivity level	1
Maximum non-repetitive peak reverse power dissipation	30000 W
Number of components	1
Number of terminals	1
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	SQUARE
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	UNIDIRECTIONAL
Maximum power dissipation	2.5 W
Certification status	Not Qualified
Guideline	IEC-61000-4-2, 4-4, 4-5; MIL-19500
Maximum repetitive peak reverse voltage	85 V
surface mount	YES
technology	AVALANCHE
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED

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