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SB180

Description
1 A, 80 V, SILICON, SIGNAL DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size41KB,2 Pages
ManufacturerZOWIE Technology Corporation
Websitehttp://www.zowie.com.tw/
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SB180 Overview

1 A, 80 V, SILICON, SIGNAL DIODE, DO-41

SB180 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionD4, 2 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeROUND
Package SizeLONG FORM
Terminal formWIRE
terminal coatingMATTE TIN
Terminal locationAXIAL
Packaging MaterialsPLASTIC/EPOXY
CraftsmanshipSCHOTTKY
structureSINGLE
Shell connectionISOLATED
Diode component materialsSILICON
Maximum power consumption limit1.25 W
Diode typeSIGNAL DIODE
Maximum repetitive peak reverse voltage80 V
Maximum average forward current1 A

SB180 Related Products

SB180 SB190 SB160 SB150 SB140 SB130 SB120
Description 1 A, 80 V, SILICON, SIGNAL DIODE, DO-41 1 A, 90 V, SILICON, SIGNAL DIODE, DO-41 1 A, 60 V, SILICON, SIGNAL DIODE, DO-41 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, 40 V, SILICON, SIGNAL DIODE, DO-41 1 A, 30 V, SILICON, SIGNAL DIODE, DO-41 1 A, 20 V, SILICON, SIGNAL DIODE, DO-41
Number of components 1 - 1 - 1 - 1
Diode type SIGNAL DIODE - RECTIFIER DIODE - RECTIFIER DIODE - RECTIFIER DIODE
Maximum repetitive peak reverse voltage 80 V - 60 V - 40 V - 20 V

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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