PJX8804 datasheet, PDF - EEWORLD Datasheet

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PJX8804: Description30V N-Channel Enhancement Mode MOSFET â ESD Protected; File Size307KB，6 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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PJX8804 Overview

30V N-Channel Enhancement Mode MOSFET â ESD Protected

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PPJX8804

30V N-Channel Enhancement Mode MOSFET – ESD Protected

Voltage

Features



RDS(ON) , VGS@4,5V, ID@0.6A<220mΩ



RDS(ON) , VGS@2.5V, ID@0.4A<290mΩ



RDS(ON) , VGS@1.8V, ID@0.1A<600mΩ



Advanced Trench Process Technology



Specially Designed for Load Switch or PWM application.



ESD Protected 2KV HBM



Lead free in compliance with EU RoHS 2011/65/EU directive.



Green molding compound as per IEC61249 Std.

30 V

Current

0.6A

SOT-563

Unit : inch(mm)

(Halogen Free)

Mechanical Data



Case: SOT-563 Package



Terminals: Solderable per MIL-STD-750, Method 2026



Approx. Weight: 0.00009 ounces, 0.0026 grams



Marking: X04

Maximum Ratings and Thermal Characteristics

=25 C unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Power Dissipation

=25

Derate above 25

SYMBOL

STG

θJA

LIMIT

UNITS

mW/

0.6

2.4

300

2.4

-55~150

417

Operating Junction and Storage Temperature Range

Typical Thermal resistance

Junction to Ambient

(Note 3)

C/W

January 22,2015-REV.02

Page 1

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