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SUD50P10-43L

File Size1MB,9 Pages
ManufacturerVBsemi Electronics Co. Ltd.
Websitehttp://www.vbsemi.tw/
Founded in 2000, VBsemi is the most competitive power semiconductor component manufacturer of MOSFET in Taiwan. The company has obtained many product invention patents and has been certified by ISO14001, QS9000, and ISO9001. VBsemi is a Taiwanese company that independently develops, produces, and sells MOSFET under its own brand. From component design, wafer processing, packaging, characteristic analysis, testing, and customer service, it is marketed worldwide. The company's products have been widely used in UPS, Power Inverter, CCFL, DC Fan, SMPS, Adapter, Lighting, Battery, DC-DC, LCD Monitor and other fields.
Download Datasheet Parametric View All

SUD50P10-43L Parametric

Parameter NameAttribute value
type-
Drain-source voltage (Vdss)-
Continuous drain current (Id)-
Power(Pd)-
On-resistance (RDS(on)@Vgs,Id)-
Threshold voltage (Vgs(th)@Id)-
Gate charge (Qg@Vgs)-
Input capacitance (Ciss@Vds)-
Reverse transfer capacitance (Crss@Vds)-

SUD50P10-43L Preview

Download Datasheet
SUD50P10-43L
P-Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
() at V
GS
= - 10 V
R
DS(on)
() at V
GS
= - 4.5 V
I
D
(A)
Configuration
- 100
0.033
0.036
- 40
Single
www.VBsemi.tw
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• Package with Low Thermal Resistance
• 100 % R
g
and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
TO-252
S
G
Drain Connected to Tab
G
D
S
D
P-Channel MOSFET
Top View
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
a
Pulsed Drain Current
b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
b
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25 °C
T
C
= 125 °C
T
C
= 25 °C
T
C
= 125 °C
SYMBOL
V
DS
V
GS
I
D
I
S
I
DM
I
AS
E
AS
P
D
T
J
, T
stg
LIMIT
- 100
± 20
- 40
- 22
- 50
- 150
- 44
96
136
45
- 55 to + 175
mJ
W
°C
A
UNIT
V
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width
300 μs, duty cycle
2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
PCB Mount
c
SYMBOL
R
thJA
R
thJC
LIMIT
50
1.1
UNIT
°C/W
E-mail:China@VBsemi TEL:86-755-83251052
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