2.8 A, 800 V, SILICON, RECTIFIER DIODE
Parameter Name | Attribute value |
Maker | SSDI |
package instruction | HERMETIC SEALED PACKAGE-2 |
Contacts | 2 |
Reach Compliance Code | compli |
ECCN code | EAR99 |
application | EFFICIENCY |
Shell connection | ISOLATED |
Configuration | SINGLE |
Diode component materials | SILICON |
Diode type | RECTIFIER DIODE |
Maximum forward voltage (VF) | 1.8 V |
JESD-30 code | E-XALF-W2 |
Maximum non-repetitive peak forward current | 75 A |
Number of components | 1 |
Phase | 1 |
Number of terminals | 2 |
Maximum operating temperature | 175 °C |
Maximum output current | 2.8 A |
Package body material | UNSPECIFIED |
Package shape | ELLIPTICAL |
Package form | LONG FORM |
Certification status | Not Qualified |
Maximum repetitive peak reverse voltage | 800 V |
Maximum reverse recovery time | 0.05 µs |
surface mount | NO |
Terminal form | WIRE |
Terminal location | AXIAL |