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KDF640P

Description
N-Channel MOSFET Preliminary
CategoryDiscrete semiconductor   
File Size224KB,4 Pages
ManufacturerKedasemi
Websitehttp://www.kedasemi.com/

Keda Semiconductor Co., Ltd. is a high-tech enterprise invested and established by Keda Group (stock code: 600986). It was registered in October 2007 and is located in the Economic Development Zone of Dongying City, Shandong Province. It has a registered capital of 50 million yuan and is mainly engaged in the design, production and sales of new power semiconductor devices (power electronic devices) such as IGBT, FRD, MOSFET, etc. The company has sales centers in Shenzhen, Shanghai, Zhejiang, Chengdu, Hong Kong and other regions.

Keda Semiconductor is the first IGBT and FRD chip manufacturer in China with independent intellectual property rights. The company has a first-class design and development team in China, and the IGBT and FRD products designed and developed by it fill the domestic gap. The company has a provincial design center, a provincial power semiconductor engineering center, and is equipped with a fully functional performance testing laboratory and reliability laboratory. The company's products are widely used in induction cookers, low-power inverters, inverter welding machines, brushless motor controllers, UPS, switching power supplies, LCD TVs and monitors, solar energy applications and other fields.

Keda Semiconductor Co., Ltd. adheres to the business philosophy of "customer-oriented, innovation-driven" and is willing to cooperate sincerely with colleagues and enterprises to jointly create a brilliant future for China's power semiconductor industry.

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KDF640P Overview

N-Channel MOSFET Preliminary

Features

Product Name: N-Channel MOSFET Preliminary


Product model: KDF640P


Product Description:


200V,18A,Rds(on)(typ)=0.13$@Vgs=10V


High Ruggedness


Fast Switching


100% Avalanche Tested


Improved dv/dt Capability



parameter:


Configuration: Single-N


VDSS (drain-source voltage): 200V


Vgs (gate-source voltage): +-30V


IDS (drain source current): 18A 25C


13A 100C


RDS(on) (drain-source resistance in on state): 150mΩ when VGS=10V


VGS (th) (gate threshold voltage): 2~4V


Package: TO-220



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