HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200702
Issued Date : 2007.03.01
Revised Date : 2007.03.28
Page No. : 1/4
H3055MJ
N-Channel Enhancement-Mode MOSFET (30V, 12A)
H3055MJ Pin Assignment
Tab
1
2
3
3-Lead Plastic
TO-252
Package Code: J
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
Description
This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced
trench process. It has been optimized for power management applications with a
wide range of gate drive voltage (2.5V-10V)
D
Internal Schematic
Diagram
G
S
Features
•
R
DS(on)
=45mΩ@V
GS
=4.5V, I
D
=5.2A; R
DS(on)
=35mΩ@V
GS
=10V, I
D
=6A
•
High Density Cell Design for Ultra Low On-Resistance
•
High Power and Current Handing Capability
•
Fully Characterized Avalanche Voltage and Current
•
Ideal for Li ion Battery Pack Applications
Applications
•
Battery Protection
•
Load Switch
•
Power Management
Absolute Maximum Ratings
(T
A
=25
o
C, unless otherwise noted)
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
j
, T
stg
R
θ
JA
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)
Drain Current (Pulsed)
*1
o
o
Parameter
Ratings
30
±20
12
30
2
1.3
-55 to +150
62.5
Units
V
V
A
A
W
W
°C
°C/W
Total Power Dissipation @T
A
=25 C
Total Power Dissipation @T
A
=75 C
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient
*2
*1: Maximum DC current limited by the package
2
*2: 1-in 2oz Cu PCB board
H3055MJ
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Electrical Characteristics
(T
A
=25°C, unless otherwise noted)
Symbol
•
Static
BV
DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
g
FS
•
Dynamic
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V
DD
=15V, I
D
=1A, V
GEN
=10V
R
GEN
=3Ω, R
L
=2.2Ω
V
DS
=10V, V
GS
=0V, f=1MHz
V
DS
=10V, I
D
=6A, V
GS
=6.9V
-
-
-
-
-
-
-
-
-
-
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Forward Transconductance
V
GS
=0V, I
D
=250uA
V
GS
=4.5V, I
D
=5.2A
V
GS
=10V, I
D
=6A
V
DS
=V
GS
, I
D
=250uA
V
DS
=30V, V
GS
=0V
V
GS
=±20V, V
DS
=0V
V
DS
=10V, I
D
=6A
30
-
-
0.6
-
-
7
Characteristic
Test Conditions
Min.
Spec. No. : MOS200702
Issued Date : 2007.03.01
Revised Date : 2007.03.28
Page No. : 2/4
Typ.
Max.
Unit
-
34
25
-
-
-
13
-
45
V
mΩ
35
1.5
1
±100
-
V
uA
nA
S
4.2
1.2
1.7
410
73
55
3
2
10
3
-
-
-
-
-
-
-
-
-
-
ns
pF
nC
•
Drain-Source Diode Characteristics
I
S
V
SD
Maximum Diode Forward Current
Drain-Source Diode Forward Voltage
V
GS
=0V, I
S
=1A
-
-
-
-
4.3
1
A
V
Note: Pulse Test: Pulse Width
≤300us,
Duty Cycle≤2%
Switching
Test Circuit
V
DD
t
d(on)
t
on
t
r
Switching
Waveforms
t
d(off)
t
off
t
f
90%
90%
R
D
V
IN
V
GEN
R
G
G
S
Input, V
IN
10%
Pulse Width
50%
50%
90%
D
V
OUT
Output, V
OUT
10%
10%
Inverted
H3055MJ
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-252 Dimension
Marking:
Spec. No. : MOS200702
Issued Date : 2007.03.01
Revised Date : 2007.03.28
Page No. : 3/4
M
A
F
C
G
1
2
3
Date Code
a1
Pb Free Mark
Pb-Free: "
.
"
(Note)
H
Normal: None
J
3 0 5 5 M
Control Code
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2.Drain 3.Source
N
H
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
A
C
F
G
H
L
M
N
a1
a2
a5
Min.
6.35
4.80
1.30
5.40
2.20
0.40
2.20
0.90
0.40
-
0.65
Max.
6.80
5.50
1.70
6.25
3.00
0.90
2.40
1.50
0.65
*2.30
1.05
*: Typical, Unit: mm
a5
L
a2
a1
3-Lead TO-252 Plastic
Surface Mount Package
HSMC Package Code: J
A
B
C
D
a1
E
Marking:
M
F
y1
a1
Pb-Free: "
.
"
(Note)
H
Normal: None
Pb Free Mark
J
3 0 5 5 M
Date Code
Control Code
GI
y1
y1
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2.Drain 3.Source
Material:
J
K
a2
y2
H
N
L
a2
y2
3-Lead TO-252 Plastic
Surface Mount Package
HSMC Package Code: J
a1
O
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
a1
a2
y1
y2
Min.
6.40
-
5.04
-
0.40
0.50
5.90
2.50
9.20
0.60
-
0.66
2.20
0.70
0.82
0.40
2.10
-
-
Max.
6.80
6.00
5.64
*4.34
0.80
0.90
6.30
2.90
9.80
1.00
0.96
0.86
2.40
1.10
1.22
0.60
2.50
5
o
3
o
*: Typical, Unit: mm
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
•
HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
•
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
•
Factory 1:
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
H3055MJ
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10 C~35 C Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
t
P
T
P
Ramp-up
T
L
Ts
max
Temperature
t
L
o
o
Spec. No. : MOS200702
Issued Date : 2007.03.01
Revised Date : 2007.03.28
Page No. : 4/4
Critical Zone
T
L
to T
P
Ts
min
t
S
Preheat
Ramp-down
25
t 25
o
C to Peak
Time
Profile Feature
Average ramp-up rate (T
L
to T
P
)
Preheat
- Temperature Min (Ts
min
)
- Temperature Max (Ts
max
)
- Time (min to max) (ts)
Tsmax to T
L
- Ramp-up Rate
Time maintained above:
- Temperature (T
L
)
- Time (t
L
)
Peak Temperature (T
P
)
Time within 5 C of actual Peak
Temperature (t
P
)
Ramp-down Rate
Time 25 C to Peak Temperature
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
o
o
Sn-Pb Eutectic Assembly
<3 C/sec
o
Pb-Free Assembly
<3 C/sec
o
100 C
150 C
60~120 sec
o
o
150 C
200 C
60~180 sec
o
o
<3 C/sec
o
<3 C/sec
o
183 C
60~150 sec
240 C +0/-5 C
10~30 sec
<6 C/sec
<6 minutes
o
o
o
o
217 C
60~150 sec
260 C +0/-5 C
20~40 sec
<6 C/sec
<8 minutes
o
o
o
o
Peak temperature
245 C
±5
C
o
o
o
o
Dipping time
10sec
±1sec
10sec
±1sec
260 C
±5
C
H3055MJ
HSMC Product Specification
RF/Wirelessly
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