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MMBT5401

Description
160V 600mA PNP bipolar transistor
CategoryDiscrete semiconductor   
File Size17KB,1 Pages
ManufacturerShanghai Jiaxing Electronics Co.,Ltd.
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MMBT5401 Overview

160V 600mA PNP bipolar transistor

Features

Product Name: SOT-23 package transistor 160V 600mA PNP bipolar transistor


Product model: MMBT5401


Features:


Technical Parameters:


 POLARITY: PNP


 Pcm power: 300mW


 Ic current: 600mA


 BVCBO collector breakdown voltage: 160V


 BVCBO collector breakdown voltage: 150V


 BVEBO emitter reverse breakdown voltage: 5V


 hFE amplification factor MIN: 60 (Vce=5V, Ic=10mA)


 hFE amplification factor MAX: 240 (Vce=5V, Ic=10mA)


 VCE(sat) saturation voltage drop: 0.5V (Ic=50mA, Ib=5mA)


 Ft characteristic frequency: 100MHz


Package: SOT23


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