SMAJ5.0HE3G datasheet, PDF - EEWORLD Datasheet

SMAJ5.0HE3G: DescriptionTrans Voltage Suppressor Diode, 400W, 5V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC, SMA, 2 PIN; CategoryDiscrete semiconductor diode; File Size191KB，7 Pages; ManufacturerTaiwan Semiconductor; Websitehttp://www.taiwansemi.com/; Environmental Compliance

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SMAJ5.0HE3G Overview

Trans Voltage Suppressor Diode, 400W, 5V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC, SMA, 2 PIN

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Taiwan Semiconductor
package instruction	R-PDSO-C2
Reach Compliance Code	compli
ECCN code	EAR99
Date Of I	2016-01-28
Other features	EXCELLENT CLAMPING CAPABILITY
Maximum breakdown voltage	7.3 V
Minimum breakdown voltage	6.4 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 code	DO-214AC
JESD-30 code	R-PDSO-C2
JESD-609 code	e3
Humidity sensitivity level	1
Maximum non-repetitive peak reverse power dissipation	400 W
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	UNIDIRECTIONAL
Maximum power dissipation	1 W
Guideline	AEC-Q101
Maximum repetitive peak reverse voltage	5 V
surface mount	YES
technology	AVALANCHE
Terminal surface	Matte Tin (Sn)
Terminal form	C BEND
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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