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M2N1G64TU8HA2B-3C

Description
DDR DRAM Module, 128MX64, 0.45ns, CMOS, GREEN, SODIMM-200
Categorystorage    storage   
File Size296KB,12 Pages
ManufacturerNanya
Websitehttp://www.nanya.com/cn
Nanya Technology Co., Ltd. aims to become the best DRAM (dynamic random access memory) supplier. It emphasizes customer service and strengthens product R&D and manufacturing through close cooperation with partners, thereby providing customers with comprehensive products and system solutions. In the face of the growing niche DRAM market, Nanya Technology not only provides products ranging from 128Mb to 8Gb, but also continues to expand product diversification. The main application markets include digital TV, set-top box (STB), network communication, tablet computer and other smart electronic systems, automotive and industrial products. At the same time, in order to meet the needs of the rapidly growing mobile and wearable device market, Nanya Technology is more focused on the research and development and manufacturing of low-power memory products. In recent years, Nanya Technology has actively operated in the niche memory market, focusing on the research and development of low-power and customized core product lines. In terms of process progress, it has also introduced 20nm process technology and is committed to the production of DDR4 and LPDDR4 products, hoping to further enhance its overall competitiveness. Nanya Technology will also continue to strengthen its high value-added niche memory products and perfect customer service, enhance core business operating performance, ensure the rights and interests of all shareholders, and create sustainable business value for the company.
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M2N1G64TU8HA2B-3C Overview

DDR DRAM Module, 128MX64, 0.45ns, CMOS, GREEN, SODIMM-200

M2N1G64TU8HA2B-3C Parametric

Parameter NameAttribute value
MakerNanya
Parts packaging codeSODIMM
package instructionDIMM,
Contacts200
Reach Compliance Codecompli
ECCN codeEAR99
access modeDUAL BANK PAGE BURST
Maximum access time0.45 ns
Other featuresAUTO/SELF REFRESH
JESD-30 codeR-XZMA-N200
memory density8589934592 bi
Memory IC TypeDDR DRAM MODULE
memory width64
Number of functions1
Number of ports1
Number of terminals200
word count134217728 words
character code128000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature
organize128MX64
Package body materialUNSPECIFIED
encapsulated codeDIMM
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Certification statusNot Qualified
self refreshYES
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountNO
technologyCMOS
Temperature levelOTHER
Terminal formNO LEAD
Terminal locationZIG-ZAG
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