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DMP2023UFDF-13

Description
Small Signal Field-Effect Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size379KB,7 Pages
ManufacturerDiodes Incorporated
Environmental Compliance
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DMP2023UFDF-13 Overview

Small Signal Field-Effect Transistor,

DMP2023UFDF-13 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerDiodes Incorporated
package instructionU-DFN2020-6, 6 PIN
Reach Compliance Codecompli
ECCN codeEAR99
Factory Lead Time22 weeks
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (ID)7.6 A
Maximum drain-source on-resistance0.027 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeS-PDSO-N6
JESD-609 codee4
Number of components1
Number of terminals6
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeSQUARE
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
surface mountYES
Terminal surfaceNickel/Palladium/Gold (Ni/Pd/Au)
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON

DMP2023UFDF-13 Related Products

DMP2023UFDF-13 DMP2023UFDF-7
Description Small Signal Field-Effect Transistor, Small Signal Field-Effect Transistor
Is it Rohs certified? conform to conform to
Maker Diodes Incorporated Diodes Incorporated
package instruction U-DFN2020-6, 6 PIN U-DFN2020-6, 6 PIN
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Factory Lead Time 22 weeks 16 weeks
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 20 V 20 V
Maximum drain current (ID) 7.6 A 7.6 A
Maximum drain-source on-resistance 0.027 Ω 0.027 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code S-PDSO-N6 S-PDSO-N6
JESD-609 code e4 e4
Number of components 1 1
Number of terminals 6 6
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape SQUARE SQUARE
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED 260
Polarity/channel type P-CHANNEL P-CHANNEL
surface mount YES YES
Terminal surface Nickel/Palladium/Gold (Ni/Pd/Au) Nickel/Palladium/Gold (Ni/Pd/Au)
Terminal form NO LEAD NO LEAD
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED 30
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON

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