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MJE13005L-C-TND-R

Description
Power Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size412KB,10 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Download Datasheet Parametric View All

MJE13005L-C-TND-R Overview

Power Bipolar Transistor

MJE13005L-C-TND-R Parametric

Parameter NameAttribute value
MakerUNISONIC TECHNOLOGIES CO.,LTD
package instructionTO-252D, 3/2 PIN
Reach Compliance Codecompli
Maximum collector current (IC)4 A
Collector-emitter maximum voltage400 V
ConfigurationSINGLE
Minimum DC current gain (hFE)25
JEDEC-95 codeTO-252
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)4 MHz

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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