Power Bipolar Transistor
Parameter Name | Attribute value |
Maker | UNISONIC TECHNOLOGIES CO.,LTD |
package instruction | TO-252D, 3/2 PIN |
Reach Compliance Code | compli |
Maximum collector current (IC) | 4 A |
Collector-emitter maximum voltage | 400 V |
Configuration | SINGLE |
Minimum DC current gain (hFE) | 25 |
JEDEC-95 code | TO-252 |
JESD-30 code | R-PSSO-G2 |
Number of components | 1 |
Number of terminals | 2 |
Maximum operating temperature | 150 °C |
Minimum operating temperature | -65 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Polarity/channel type | NPN |
surface mount | YES |
Terminal form | GULL WING |
Terminal location | SINGLE |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Nominal transition frequency (fT) | 4 MHz |