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2N587

Description
Power Bipolar Transistor, 0.2A I(C), 20V V(BR)CEO, 1-Element, NPN, Germanium, TO-5, Metal, 3 Pin, TO-5, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size104KB,1 Pages
ManufacturerElectronic Transistors Corp
Download Datasheet Parametric View All

2N587 Overview

Power Bipolar Transistor, 0.2A I(C), 20V V(BR)CEO, 1-Element, NPN, Germanium, TO-5, Metal, 3 Pin, TO-5, 3 PIN

2N587 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerElectronic Transistors Corp
Parts packaging codeTO-5
package instructionCYLINDRICAL, O-MBCY-W3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.2 A
Collector-emitter maximum voltage20 V
ConfigurationSingle
Minimum DC current gain (hFE)20
JEDEC-95 codeTO-5
JESD-30 codeO-MBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.15 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsGERMANIUM

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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