Trans Voltage Suppressor Diode, 15000W, 8V V(RWM), Bidirectional, 1 Element, Silicon
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Microchip |
| package instruction | R-PSSO-G1 |
| Reach Compliance Code | compli |
| Other features | HIGH RELIABILITY |
| Maximum breakdown voltage | 9.83 V |
| Minimum breakdown voltage | 8.89 V |
| Breakdown voltage nominal value | 9.36 V |
| Shell connection | CATHODE |
| Maximum clamping voltage | 13.6 V |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | TRANS VOLTAGE SUPPRESSOR DIODE |
| JESD-30 code | R-PSSO-G1 |
| JESD-609 code | e0 |
| Humidity sensitivity level | 1 |
| Maximum non-repetitive peak reverse power dissipation | 15000 W |
| Number of components | 1 |
| Number of terminals | 1 |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| polarity | BIDIRECTIONAL |
| Maximum power dissipation | 2.5 W |
| Certification status | Not Qualified |
| Guideline | MIL-19500 |
| Maximum repetitive peak reverse voltage | 8 V |
| surface mount | YES |
| technology | AVALANCHE |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | GULL WING |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
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