M12L128168A-5BVG2N datasheet, PDF

M12L128168A-5BVG2N: DescriptionSynchronous DRAM, 8MX16, 5ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, BGA-54; Categorystorage storage; File Size687KB，46 Pages; ManufacturerESMT; Websitehttp://www.esmt.com.tw/; Elite Semiconductor Memory Technology Inc. (ESMT) is a professional IC design company founded by Dr. Hu Zhao in June 1998. Its headquarters is located in Hsinchu Science Park, Taiwan. The company's main business includes research, development, manufacturing, sales and related technical services of IC products. It was listed on the Taiwan Stock Exchange in March 2002.

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M12L128168A-5BVG2N Overview

Synchronous DRAM, 8MX16, 5ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, BGA-54

Parameter Name	Attribute value
Maker	ESMT
package instruction	VFBGA,
Reach Compliance Code	unknow
access mode	FOUR BANK PAGE BURST
Maximum access time	5 ns
Other features	AUTO/SELF REFRESH
JESD-30 code	S-PBGA-B54
length	8 mm
memory density	134217728 bi
Memory IC Type	SYNCHRONOUS DRAM
memory width	16
Number of functions	1
Number of ports	1
Number of terminals	54
word count	8388608 words
character code	8000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	8MX16
Package body material	PLASTIC/EPOXY
encapsulated code	VFBGA
Package shape	SQUARE
Package form	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Maximum seat height	1 mm
self refresh	YES
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
width	8 mm

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