MH1M08TNA-15H datasheet, PDF - EEWORLD Datasheet

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MH1M08TNA-15H: DescriptionSRAM Module, 1MX8, 150ns, CMOS; Categorystorage storage; File Size185KB，5 Pages; ManufacturerMitsubishi; Websitehttp://www.mitsubishielectric.com/semiconductors/

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MH1M08TNA-15H Overview

SRAM Module, 1MX8, 150ns, CMOS

MH1M08TNA-15H Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Mitsubishi
package instruction	DIP, DIP36,.6
Reach Compliance Code	unknown
ECCN code	3A991.B.2.A
Maximum access time	150 ns
Other features	BATTERY BACKUP
I/O type	COMMON
JESD-30 code	R-XDMA-T36
JESD-609 code	e0
memory density	8388608 bit
Memory IC Type	SRAM MODULE
memory width	8
Number of functions	1
Number of terminals	36
word count	1048576 words
character code	1000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	1MX8
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIP
Encapsulate equivalent code	DIP36,.6
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.00013 A
Minimum standby current	2 V
Maximum slew rate	0.12 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

MH1M08TNA-15H Related Products

	MH1M08TNA-15H	MH1M08TNA-15L	MH1M08TNA-85H	MH1M08TNA-10H	MH1M08TNA-10L	MH1M08TNA-85L	MH1M08TNA-12L	MH1M08TNA-12H
Description	SRAM Module, 1MX8, 150ns, CMOS	SRAM Module, 1MX8, 150ns, CMOS	SRAM Module, 1MX8, 85ns, CMOS	SRAM Module, 1MX8, 100ns, CMOS	SRAM Module, 1MX8, 100ns, CMOS	SRAM Module, 1MX8, 85ns, CMOS	SRAM Module, 1MX8, 120ns, CMOS	SRAM Module, 1MX8, 120ns, CMOS
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
package instruction	DIP, DIP36,.6	DIP, DIP36,.6	DIP, DIP36,.6	DIP, DIP36,.6	DIP, DIP36,.6	DIP, DIP36,.6	DIP, DIP36,.6	DIP, DIP36,.6
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
Maximum access time	150 ns	150 ns	85 ns	100 ns	100 ns	85 ns	120 ns	120 ns
Other features	BATTERY BACKUP	BATTERY BACKUP	BATTERY BACKUP	BATTERY BACKUP	BATTERY BACKUP	BATTERY BACKUP	BATTERY BACKUP	BATTERY BACKUP
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-XDMA-T36	R-XDMA-T36	R-XDMA-T36	R-XDMA-T36	R-XDMA-T36	R-XDMA-T36	R-XDMA-T36	R-XDMA-T36
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0
memory density	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit
Memory IC Type	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE
memory width	8	8	8	8	8	8	8	8
Number of functions	1	1	1	1	1	1	1	1
Number of terminals	36	36	36	36	36	36	36	36
word count	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words
character code	1000000	1000000	1000000	1000000	1000000	1000000	1000000	1000000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	1MX8	1MX8	1MX8	1MX8	1MX8	1MX8	1MX8	1MX8
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIP	DIP	DIP	DIP	DIP	DIP	DIP	DIP
Encapsulate equivalent code	DIP36,.6	DIP36,.6	DIP36,.6	DIP36,.6	DIP36,.6	DIP36,.6	DIP36,.6	DIP36,.6
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum standby current	0.00013 A	0.00045 A	0.00013 A	0.00013 A	0.00045 A	0.00045 A	0.00045 A	0.00013 A
Minimum standby current	2 V	2 V	2 V	2 V	2 V	2 V	2 V	2 V
Maximum slew rate	0.12 mA	0.12 mA	0.12 mA	0.12 mA	0.12 mA	0.12 mA	0.12 mA	0.12 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	NO	NO	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal pitch	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Maker	Mitsubishi	Mitsubishi	-	Mitsubishi	Mitsubishi	Mitsubishi	Mitsubishi	Mitsubishi

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