HYMD564M646BL6-H datasheet, PDF

HYMD564M646BL6-H: Description200pin Unbuffered DDR SDRAM SO-DIMMs based on 512Mb B ver. (TSOP); Categorystorage storage; File Size165KB，17 Pages; ManufacturerSK Hynix; Websitehttp://www.hynix.com/eng/

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HYMD564M646BL6-H Overview

200pin Unbuffered DDR SDRAM SO-DIMMs based on 512Mb B ver. (TSOP)

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SK Hynix
Parts packaging code	MODULE
package instruction	DIMM, DIMM200,24
Contacts	200
Reach Compliance Code	compli
ECCN code	EAR99
access mode	DUAL BANK PAGE BURST
Maximum access time	0.75 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	133 MHz
I/O type	COMMON
JESD-30 code	R-XDMA-N200
memory density	4294967296 bi
Memory IC Type	DDR DRAM MODULE
memory width	64
Number of functions	1
Number of ports	1
Number of terminals	200
word count	67108864 words
character code	64000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	64MX64
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM200,24
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	2.5 V
Certification status	Not Qualified
refresh cycle	8192
self refresh	YES
Maximum slew rate	1.68 mA
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.3 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	0.6 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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