|
TSM1N80SCTB0 |
TSM1N80CWRP |
TSM1N80SCTA3 |
Description |
0.3 A, 800 V, 21.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
0.3 A, 800 V, 21.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
0.3 A, 800 V, 21.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
package instruction |
CYLINDRICAL, O-PBCY-T3 |
SMALL OUTLINE, R-PDSO-G4 |
CYLINDRICAL, O-PBCY-T3 |
Reach Compliance Code |
unknow |
compli |
unknow |
ECCN code |
EAR99 |
EAR99 |
EAR99 |
Avalanche Energy Efficiency Rating (Eas) |
90 mJ |
90 mJ |
90 mJ |
Configuration |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage |
800 V |
800 V |
800 V |
Maximum drain current (ID) |
0.3 A |
0.3 A |
0.3 A |
Maximum drain-source on-resistance |
21.6 Ω |
21.6 Ω |
21.6 Ω |
FET technology |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
JESD-30 code |
O-PBCY-T3 |
R-PDSO-G4 |
O-PBCY-T3 |
Number of components |
1 |
1 |
1 |
Number of terminals |
3 |
4 |
3 |
Operating mode |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
Package body material |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
Package shape |
ROUND |
RECTANGULAR |
ROUND |
Package form |
CYLINDRICAL |
SMALL OUTLINE |
CYLINDRICAL |
Polarity/channel type |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
Maximum pulsed drain current (IDM) |
1 A |
1 A |
1 A |
Certification status |
Not Qualified |
Not Qualified |
Not Qualified |
surface mount |
NO |
YES |
NO |
Terminal form |
THROUGH-HOLE |
GULL WING |
THROUGH-HOLE |
Terminal location |
BOTTOM |
DUAL |
BOTTOM |
transistor applications |
SWITCHING |
SWITCHING |
SWITCHING |
Transistor component materials |
SILICON |
SILICON |
SILICON |
Base Number Matches |
1 |
1 |
1 |
JEDEC-95 code |
TO-92 |
- |
TO-92 |