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TSM1N80SCTB0

Description
0.3 A, 800 V, 21.6 ohm, N-CHANNEL, Si, POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size275KB,9 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Download Datasheet Parametric Compare View All

TSM1N80SCTB0 Overview

0.3 A, 800 V, 21.6 ohm, N-CHANNEL, Si, POWER, MOSFET

TSM1N80SCTB0 Parametric

Parameter NameAttribute value
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codeunknow
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)90 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage800 V
Maximum drain current (ID)0.3 A
Maximum drain-source on-resistance21.6 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)1 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

TSM1N80SCTB0 Related Products

TSM1N80SCTB0 TSM1N80CWRP TSM1N80SCTA3
Description 0.3 A, 800 V, 21.6 ohm, N-CHANNEL, Si, POWER, MOSFET 0.3 A, 800 V, 21.6 ohm, N-CHANNEL, Si, POWER, MOSFET 0.3 A, 800 V, 21.6 ohm, N-CHANNEL, Si, POWER, MOSFET
package instruction CYLINDRICAL, O-PBCY-T3 SMALL OUTLINE, R-PDSO-G4 CYLINDRICAL, O-PBCY-T3
Reach Compliance Code unknow compli unknow
ECCN code EAR99 EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 90 mJ 90 mJ 90 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 800 V 800 V 800 V
Maximum drain current (ID) 0.3 A 0.3 A 0.3 A
Maximum drain-source on-resistance 21.6 Ω 21.6 Ω 21.6 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code O-PBCY-T3 R-PDSO-G4 O-PBCY-T3
Number of components 1 1 1
Number of terminals 3 4 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND RECTANGULAR ROUND
Package form CYLINDRICAL SMALL OUTLINE CYLINDRICAL
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 1 A 1 A 1 A
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO YES NO
Terminal form THROUGH-HOLE GULL WING THROUGH-HOLE
Terminal location BOTTOM DUAL BOTTOM
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Base Number Matches 1 1 1
JEDEC-95 code TO-92 - TO-92

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