TSM1N80SCTA3 datasheet, PDF - EEWORLD Datasheet

TSM1N80SCTA3: Description0.3 A, 800 V, 21.6 ohm, N-CHANNEL, Si, POWER, MOSFET; CategoryDiscrete semiconductor The transistor; File Size275KB，9 Pages; ManufacturerTaiwan Semiconductor; Websitehttp://www.taiwansemi.com/

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TSM1N80SCTA3 Overview

0.3 A, 800 V, 21.6 ohm, N-CHANNEL, Si, POWER, MOSFET

Parameter Name	Attribute value
package instruction	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknow
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	90 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	800 V
Maximum drain current (ID)	0.3 A
Maximum drain-source on-resistance	21.6 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	1 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

	TSM1N80SCTA3	TSM1N80CWRP	TSM1N80SCTB0
Description	0.3 A, 800 V, 21.6 ohm, N-CHANNEL, Si, POWER, MOSFET	0.3 A, 800 V, 21.6 ohm, N-CHANNEL, Si, POWER, MOSFET	0.3 A, 800 V, 21.6 ohm, N-CHANNEL, Si, POWER, MOSFET
package instruction	CYLINDRICAL, O-PBCY-T3	SMALL OUTLINE, R-PDSO-G4	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknow	compli	unknow
ECCN code	EAR99	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	90 mJ	90 mJ	90 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	800 V	800 V	800 V
Maximum drain current (ID)	0.3 A	0.3 A	0.3 A
Maximum drain-source on-resistance	21.6 Ω	21.6 Ω	21.6 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	O-PBCY-T3	R-PDSO-G4	O-PBCY-T3
Number of components	1	1	1
Number of terminals	3	4	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	RECTANGULAR	ROUND
Package form	CYLINDRICAL	SMALL OUTLINE	CYLINDRICAL
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	1 A	1 A	1 A
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	YES	NO
Terminal form	THROUGH-HOLE	GULL WING	THROUGH-HOLE
Terminal location	BOTTOM	DUAL	BOTTOM
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Base Number Matches	1	1	1
JEDEC-95 code	TO-92	-	TO-92

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