AR35A08 datasheet, PDF - EEWORLD Datasheet

AR35A08: Description35 A, 50 V, SILICON, RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size139KB，2 Pages; ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.; Websitehttp://www.21yangjie.com/; Environmental Compliance; Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.

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AR35A08 Overview

35 A, 50 V, SILICON, RECTIFIER DIODE

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Reach Compliance Code	unknow
ECCN code	EAR99
Is Samacsys	N
Configuration	SINGLE
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
Maximum non-repetitive peak forward current	500 A
Number of components	1
Maximum operating temperature	175 °C
Maximum output current	35 A
Maximum repetitive peak reverse voltage	800 V
Base Number Matches	1

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