TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,15A I(D),SO
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Toshiba Semiconductor |
| package instruction | SMALL OUTLINE, S-PDSO-F5 |
| Reach Compliance Code | unknown |
| Avalanche Energy Efficiency Rating (Eas) | 16 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 60 V |
| Maximum drain current (Abs) (ID) | 15 A |
| Maximum drain current (ID) | 15 A |
| Maximum drain-source on-resistance | 0.024 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) | 90 pF |
| JESD-30 code | S-PDSO-F5 |
| Number of components | 1 |
| Number of terminals | 5 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY |
| Package shape | SQUARE |
| Package form | SMALL OUTLINE |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 30 W |
| Maximum pulsed drain current (IDM) | 45 A |
| surface mount | YES |
| Terminal form | FLAT |
| Terminal location | DUAL |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| TPCA8053-H(TE12L) | TPCA8053-H(TE12LQ | TPCA8053-H(TE12L1,Q) | TPCA8053-H(TE12L,Q) | TPCA8053-H(TE12L1) | |
|---|---|---|---|---|---|
| Description | TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,15A I(D),SO | mosFET power N-CH mos 60v 15a | TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,15A I(D),SO | TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,15A I(D),SO | TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,15A I(D),SO |
| Maker | Toshiba Semiconductor | Toshiba Semiconductor | Toshiba Semiconductor | Toshiba Semiconductor | Toshiba Semiconductor |
| Is it Rohs certified? | incompatible | - | conform to | conform to | incompatible |
| package instruction | SMALL OUTLINE, S-PDSO-F5 | - | SMALL OUTLINE, S-PDSO-F5 | SMALL OUTLINE, S-PDSO-F5 | SMALL OUTLINE, S-PDSO-F5 |
| Reach Compliance Code | unknown | - | unknown | unknown | unknown |
| Avalanche Energy Efficiency Rating (Eas) | 16 mJ | - | 16 mJ | 16 mJ | 16 mJ |
| Shell connection | DRAIN | - | DRAIN | DRAIN | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 60 V | - | 60 V | 60 V | 60 V |
| Maximum drain current (Abs) (ID) | 15 A | - | 15 A | 15 A | 15 A |
| Maximum drain current (ID) | 15 A | - | 15 A | 15 A | 15 A |
| Maximum drain-source on-resistance | 0.024 Ω | - | 0.024 Ω | 0.024 Ω | 0.024 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) | 90 pF | - | 90 pF | 90 pF | 90 pF |
| JESD-30 code | S-PDSO-F5 | - | S-PDSO-F5 | S-PDSO-F5 | S-PDSO-F5 |
| Number of components | 1 | - | 1 | 1 | 1 |
| Number of terminals | 5 | - | 5 | 5 | 5 |
| Operating mode | ENHANCEMENT MODE | - | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | SQUARE | - | SQUARE | SQUARE | SQUARE |
| Package form | SMALL OUTLINE | - | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| Polarity/channel type | N-CHANNEL | - | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum power dissipation(Abs) | 30 W | - | 30 W | 30 W | 30 W |
| Maximum pulsed drain current (IDM) | 45 A | - | 45 A | 45 A | 45 A |
| surface mount | YES | - | YES | YES | YES |
| Terminal form | FLAT | - | FLAT | FLAT | FLAT |
| Terminal location | DUAL | - | DUAL | DUAL | DUAL |
| transistor applications | SWITCHING | - | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | - | SILICON | SILICON | SILICON |
EEWorld
subscription
account
EEWorld
service
account
Automotive
development
circle
京公网安备 11010802033920号
EEWORLD