TRANSISTOR 22 A, 30 V, 0.0087 ohm, N-CHANNEL, Si, POWER, MOSFET, THIN, 2-5Q1S, 8 PIN, FET General Purpose Power
| Parameter Name | Attribute value |
| Maker | Toshiba Semiconductor |
| Parts packaging code | SOT |
| package instruction | SMALL OUTLINE, S-PDSO-F5 |
| Contacts | 8 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 125 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 30 V |
| Maximum drain current (ID) | 22 A |
| Maximum drain-source on-resistance | 0.0087 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | S-PDSO-F5 |
| Number of components | 1 |
| Number of terminals | 5 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY |
| Package shape | SQUARE |
| Package form | SMALL OUTLINE |
| Polarity/channel type | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 66 A |
| surface mount | YES |
| Terminal form | FLAT |
| Terminal location | DUAL |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
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