Silicon Controlled Rectifier, 850A I(T)RMS, 540000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-200AB,
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | International Rectifier （ Infineon ） |
| package instruction | DISK BUTTON, O-CEDB-N2 |
| Reach Compliance Code | unknown |
| Nominal circuit commutation break time | 15 µs |
| Configuration | SINGLE |
| Maximum DC gate trigger current | 150 mA |
| Maximum DC gate trigger voltage | 2.5 V |
| Maximum holding current | 500 mA |
| JEDEC-95 code | TO-200AB |
| JESD-30 code | O-CEDB-N2 |
| Maximum leakage current | 60 mA |
| Humidity sensitivity level | 1 |
| On-state non-repetitive peak current | 10000 A |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum on-state current | 540000 A |
| Maximum operating temperature | 140 °C |
| Minimum operating temperature | -40 °C |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| Package shape | ROUND |
| Package form | DISK BUTTON |
| Peak Reflow Temperature (Celsius) | 225 |
| Certification status | Not Qualified |
| Maximum rms on-state current | 850 A |
| Off-state repetitive peak voltage | 800 V |
| Repeated peak reverse voltage | 800 V |
| surface mount | YES |
| Terminal form | NO LEAD |
| Terminal location | END |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Trigger device type | SCR |
EEWorld
subscription
account
EEWorld
service
account
Automotive
development
circle
京公网安备 11010802033920号
EEWORLD