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HYB25D512400DT-5

Description
DDR DRAM, 128MX4, 0.7ns, CMOS, PDSO66, PLASTIC, TSOP2-66
Categorystorage    storage   
File Size2MB,40 Pages
ManufacturerQIMONDA
Download Datasheet Parametric View All

HYB25D512400DT-5 Overview

DDR DRAM, 128MX4, 0.7ns, CMOS, PDSO66, PLASTIC, TSOP2-66

HYB25D512400DT-5 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerQIMONDA
Parts packaging codeTSOP2
package instructionTSOP2, TSSOP66,.46
Contacts66
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time0.7 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)200 MHz
I/O typeCOMMON
interleaved burst length2,4,8
JESD-30 codeR-PDSO-G66
length22.22 mm
memory density536870912 bit
Memory IC TypeDDR DRAM
memory width4
Humidity sensitivity level1
Number of functions1
Number of ports1
Number of terminals66
word count134217728 words
character code128000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize128MX4
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Encapsulate equivalent codeTSSOP66,.46
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)225
power supply2.5 V
Certification statusNot Qualified
refresh cycle8192
Maximum seat height1.2 mm
self refreshYES
Continuous burst length2,4,8
Maximum standby current0.0046 A
Maximum slew rate0.198 mA
Maximum supply voltage (Vsup)2.7 V
Minimum supply voltage (Vsup)2.3 V
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width10.16 mm
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