V59C1G01808QAJ25AE datasheet, PDF

V59C1G01808QAJ25AE: DescriptionDDR DRAM, 128MX8, 0.4ns, CMOS, PBGA68, ROHS COMPLIANT, FBGA-68; Categorystorage storage; File Size1MB，79 Pages; ManufacturerProMOS Technologies Inc; Environmental Compliance

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V59C1G01808QAJ25AE Overview

DDR DRAM, 128MX8, 0.4ns, CMOS, PBGA68, ROHS COMPLIANT, FBGA-68

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	ProMOS Technologies Inc
Parts packaging code	BGA
package instruction	TFBGA,
Contacts	68
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	MULTI BANK PAGE BURST
Maximum access time	0.4 ns
Other features	AUTO/SELF REFRESH
JESD-30 code	R-PBGA-B68
length	17 mm
memory density	1073741824 bit
Memory IC Type	DDR DRAM
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	68
word count	134217728 words
character code	128000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature
organize	128MX8
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum seat height	1.2 mm
self refresh	YES
Maximum supply voltage (Vsup)	1.9 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	9 mm

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