Insulated Gate Bipolar Transistor, 72A I(C), 600V V(BR)CES,
Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
Maker | IXYS |
Reach Compliance Code | compliant |
Maximum collector current (IC) | 72 A |
Collector-emitter maximum voltage | 600 V |
Gate-emitter maximum voltage | 20 V |
Number of components | 1 |
Maximum operating temperature | 150 °C |
Maximum power dissipation(Abs) | 225 W |
VCEsat-Max | 2.4 V |
MKI50-06A7T | MKI50-06A7 | |
---|---|---|
Description | Insulated Gate Bipolar Transistor, 72A I(C), 600V V(BR)CES, | Insulated Gate Bipolar Transistor, 72A I(C), 600V V(BR)CES, N-Channel, |
Is it Rohs certified? | conform to | conform to |
Maker | IXYS | IXYS |
Reach Compliance Code | compliant | compliant |
Maximum collector current (IC) | 72 A | 72 A |
Collector-emitter maximum voltage | 600 V | 600 V |
Gate-emitter maximum voltage | 20 V | 20 V |
Number of components | 1 | 4 |
Maximum operating temperature | 150 °C | 150 °C |
Maximum power dissipation(Abs) | 225 W | 225 W |
VCEsat-Max | 2.4 V | 2.4 V |