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MKI50-06A7T

Description
Insulated Gate Bipolar Transistor, 72A I(C), 600V V(BR)CES,
CategoryDiscrete semiconductor    The transistor   
File Size99KB,4 Pages
ManufacturerIXYS
Environmental Compliance
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MKI50-06A7T Overview

Insulated Gate Bipolar Transistor, 72A I(C), 600V V(BR)CES,

MKI50-06A7T Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerIXYS
Reach Compliance Codecompliant
Maximum collector current (IC)72 A
Collector-emitter maximum voltage600 V
Gate-emitter maximum voltage20 V
Number of components1
Maximum operating temperature150 °C
Maximum power dissipation(Abs)225 W
VCEsat-Max2.4 V

MKI50-06A7T Related Products

MKI50-06A7T MKI50-06A7
Description Insulated Gate Bipolar Transistor, 72A I(C), 600V V(BR)CES, Insulated Gate Bipolar Transistor, 72A I(C), 600V V(BR)CES, N-Channel,
Is it Rohs certified? conform to conform to
Maker IXYS IXYS
Reach Compliance Code compliant compliant
Maximum collector current (IC) 72 A 72 A
Collector-emitter maximum voltage 600 V 600 V
Gate-emitter maximum voltage 20 V 20 V
Number of components 1 4
Maximum operating temperature 150 °C 150 °C
Maximum power dissipation(Abs) 225 W 225 W
VCEsat-Max 2.4 V 2.4 V

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