K7B163625A-HI65 datasheet, PDF

K7B163625A-HI65: DescriptionCache SRAM, 512KX36, 6.5ns, CMOS, PBGA119, BGA-119; Categorystorage storage; File Size732KB，29 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K7B163625A-HI65 Overview

Cache SRAM, 512KX36, 6.5ns, CMOS, PBGA119, BGA-119

Parameter Name	Attribute value
Maker	SAMSUNG
Objectid	1919353322
Parts packaging code	BGA
package instruction	BGA,
Contacts	119
Reach Compliance Code	unknown
ECCN code	3A991.B.2.A
compound_id	9464841
Maximum access time	6.5 ns
JESD-30 code	R-PBGA-B119
length	22 mm
memory density	18874368 bit
Memory IC Type	CACHE SRAM
memory width	36
Number of functions	1
Number of terminals	119
word count	524288 words
character code	512000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	512KX36
Package body material	PLASTIC/EPOXY
encapsulated code	BGA
Package shape	RECTANGULAR
Package form	GRID ARRAY
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Maximum supply voltage (Vsup)	3.465 V
Minimum supply voltage (Vsup)	3.135 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	BALL
Terminal pitch	1.27 mm
Terminal location	BOTTOM
width	14 mm

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