IDT78C16A350DB datasheet, PDF - EEWORLD Datasheet

IDT78C16A350DB: DescriptionEEPROM, 2KX8, 350ns, Parallel, CMOS, CDIP24; Categorystorage storage; File Size259KB，9 Pages; ManufacturerIDT (Integrated Device Technology)

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IDT78C16A350DB Overview

EEPROM, 2KX8, 350ns, Parallel, CMOS, CDIP24

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	IDT (Integrated Device Technology)
Reach Compliance Code	not_compliant
Maximum access time	350 ns
command user interface	NO
Data polling	YES
Durability	10000 Write/Erase Cycles
JESD-30 code	R-XDIP-T24
JESD-609 code	e0
memory density	16384 bit
Memory IC Type	EEPROM
memory width	8
Number of terminals	24
word count	2048 words
character code	2000
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	2KX8
Package body material	CERAMIC
encapsulated code	DIP
Encapsulate equivalent code	DIP24,.6
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
power supply	5 V
Certification status	Not Qualified
Filter level	38535Q/M;38534H;883B
Maximum standby current	0.0009 A
Maximum slew rate	0.125 mA
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	6
switch bit	NO
Maximum write cycle time (tWC)	10 ms

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