Power Bipolar Transistor, 3A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
Parameter Name | Attribute value |
Objectid | 1417099148 |
package instruction | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Maximum collector current (IC) | 3 A |
Collector-emitter maximum voltage | 500 V |
Configuration | SINGLE |
Minimum DC current gain (hFE) | 15 |
JESD-30 code | R-PSSO-G2 |
Number of components | 1 |
Number of terminals | 2 |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Polarity/channel type | NPN |
Maximum power consumption environment | 40 W |
Certification status | Not Qualified |
surface mount | YES |
Terminal form | GULL WING |
Terminal location | SINGLE |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Nominal transition frequency (fT) | 18 MHz |