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V59C1256404QAUF19E

Description
DDR DRAM, 64MX4, CMOS, ROHS COMPLIANT, FBGA-68
Categorystorage    storage   
File Size1MB,79 Pages
ManufacturerProMOS Technologies Inc
Environmental Compliance  
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V59C1256404QAUF19E Overview

DDR DRAM, 64MX4, CMOS, ROHS COMPLIANT, FBGA-68

V59C1256404QAUF19E Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerProMOS Technologies Inc
Parts packaging codeBGA
package instructionTFBGA,
Contacts68
Reach Compliance Codecompliant
ECCN codeEAR99
access modeMULTI BANK PAGE BURST
Other featuresAUTO/SELF REFRESH
JESD-30 codeR-XBGA-B68
length17 mm
memory density268435456 bit
Memory IC TypeDDR DRAM
memory width4
Number of functions1
Number of ports1
Number of terminals68
word count67108864 words
character code64000000
Operating modeSYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
organize64MX4
Package body materialUNSPECIFIED
encapsulated codeTFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum seat height1.2 mm
self refreshYES
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelAUTOMOTIVE
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width9 mm

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