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NT512D64S8HAAG-8B

Description
DDR DRAM Module, 64MX64, 0.8ns, CMOS, DIMM-184
Categorystorage    storage   
File Size193KB,15 Pages
ManufacturerNanya
Websitehttp://www.nanya.com/cn
Nanya Technology Co., Ltd. aims to become the best DRAM (dynamic random access memory) supplier. It emphasizes customer service and strengthens product R&D and manufacturing through close cooperation with partners, thereby providing customers with comprehensive products and system solutions. In the face of the growing niche DRAM market, Nanya Technology not only provides products ranging from 128Mb to 8Gb, but also continues to expand product diversification. The main application markets include digital TV, set-top box (STB), network communication, tablet computer and other smart electronic systems, automotive and industrial products. At the same time, in order to meet the needs of the rapidly growing mobile and wearable device market, Nanya Technology is more focused on the research and development and manufacturing of low-power memory products. In recent years, Nanya Technology has actively operated in the niche memory market, focusing on the research and development of low-power and customized core product lines. In terms of process progress, it has also introduced 20nm process technology and is committed to the production of DDR4 and LPDDR4 products, hoping to further enhance its overall competitiveness. Nanya Technology will also continue to strengthen its high value-added niche memory products and perfect customer service, enhance core business operating performance, ensure the rights and interests of all shareholders, and create sustainable business value for the company.
Download Datasheet Parametric View All

NT512D64S8HAAG-8B Overview

DDR DRAM Module, 64MX64, 0.8ns, CMOS, DIMM-184

NT512D64S8HAAG-8B Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerNanya
Parts packaging codeDIMM
package instructionDIMM, DIMM184
Contacts184
Reach Compliance Codecompliant
ECCN codeEAR99
access modeDUAL BANK PAGE BURST
Maximum access time0.8 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)125 MHz
I/O typeCOMMON
JESD-30 codeR-XDMA-N184
JESD-609 codee4
memory density4294967296 bit
Memory IC TypeDDR DRAM MODULE
memory width64
Number of functions1
Number of ports1
Number of terminals184
word count67108864 words
character code64000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize64MX64
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeDIMM
Encapsulate equivalent codeDIMM184
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply2.5 V
Certification statusNot Qualified
refresh cycle8192
self refreshYES
Maximum slew rate4 mA
Maximum supply voltage (Vsup)2.7 V
Minimum supply voltage (Vsup)2.3 V
Nominal supply voltage (Vsup)2.5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceGold (Au)
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED

NT512D64S8HAAG-8B Preview

Download Datasheet
NT512D64S8HAAG
512MB : 64M x 64
PC2100 / PC1600 Unbuffered DIMM
184pin Two Bank Unbuffered DDR SDRAM MODULE
Features
• 184-Pin Unbuffered 8-Byte Dual In-Line Memory Module
• 64Mx64 Double Data Rate (DDR) SDRAM DIMM
• Performance:
PC1600
Speed Sort
DIMM
CAS
Latency
f
CK
Clock Frequency
t
CK
Clock Cycle
f
DQ
DQ Burst Frequency
- 8B
2
100
10
200
PC2100
- 75B
2.5
133
7.5
266
- 7K
2
133
7.5
266
MHz
ns
MHz
Unit
• DRAM D
LL
aligns DQ and DQS transitions with clock
transitions.
• Address and control signals are fully synchronous to positive
clock edge
• Programmable Operation:
- DIMM
CAS
Latency: 2, 2.5
- Burst Type: Sequential or Interleave
- Burst Length: 2, 4, 8
- Operation: Burst Read and Write
• Auto-Refresh (CBR) and Self-Refresh Modes
• Automatic and controlled precharge commands
• 13/10/2 Addressing (row/column/bank)
• 7.8
µs
Max. Average Periodic Refresh Interval
• Serial Presence Detect
• Gold contacts
• SDRAMs in 66-pin TSOP Type II Package
• Intended for 100 MHz and 133 MHz applications
• Inputs and outputs are SSTL-2 compatible
• V
DD
= 2.5Volt ± 0.2, V
DDQ
= 2.5Volt ± 0.2
• SDRAMs have 4 internal banks for concurrent operation
• Module has two physical banks
• Differential clock inputs
• Data is read or written on both clock edges
Description
NT512D64S8HAAG is an unbuffered 184-Pin Double Data Rate (DDR) Synchronous DRAM Dual In-Line Memory Module (DIMM),
organized as a two-bank high-speed memory array. The 64Mx64 module is a dual-bank DIMM that uses sixteen 32Mx8 DDR
SDRAMs in 400 mil TSOP packages. The DIMM achieves high-speed data transfer rates of up to 266MHz. The DIMM is intended for use
in applications operating from 100 MHz to 133 MHz clock speeds with data rates of 200 to 266 MHz. Clock enable CKE0 and/or CKE1
controls all devices on the DIMM.
Prior to any access operation, the device
CAS
latency and burst type/ length/operation type must be programmed into the DIMM by
address inputs A0-A12 and I/O inputs BA0 and BA1 using the mode register set cycle.
These DIMMs are manufactured using raw cards developed for broad industry use as reference designs. The use of these common
design files minimizes electrical variation between suppliers.
The DIMM uses serial presence detects implemented via a serial EEPROM using the two-pin IIC protocol. The first 128 bytes of serial PD
data are programmed and locked during module assembly. The last 128 bytes are available to the customer.
All NANYA 184 DDR SDRAM DIMMs provide a high-performance, flexible 8-byte interface in a 5.25” long space-saving footprint.
Ordering Information
Part Number
NT512D64S8HAAG-7K
Speed
143MHz (7ns @ CL = 2.5)
133MHz (7.5ns @ CL= 2)
133MHz (7.5ns @ CL= 2.5)
100MHz (10ns @ CL = 2)
125MHz (8ns @ CL = 2.5)
100MHz (10ns @ CL = 2)
PC2100
Organization
Leads
Power
NT512D64S8HAAG-75B
PC2100
64Mx64
Gold
2.5V
NT512D64S8HAAG-8B
PC1600
REV 1.1
08/2002
1
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
© NANYA TECHNOLOGY CORP.
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