Power Field-Effect Transistor, 26A I(D), 100V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIE
Parameter Name | Attribute value |
Maker | Microsemi |
Parts packaging code | DIE |
package instruction | UNCASED CHIP, X-XUUC-N |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Configuration | SINGLE |
Minimum drain-source breakdown voltage | 100 V |
Maximum drain current (ID) | 26 A |
Maximum drain-source on-resistance | 0.125 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code | X-XUUC-N |
JESD-609 code | e0 |
Number of components | 1 |
Operating mode | ENHANCEMENT MODE |
Package body material | UNSPECIFIED |
Package shape | UNSPECIFIED |
Package form | UNCASED CHIP |
Polarity/channel type | P-CHANNEL |
Certification status | Not Qualified |
surface mount | YES |
Terminal surface | TIN LEAD |
Terminal form | NO LEAD |
Terminal location | UPPER |
Transistor component materials | SILICON |