AP9B112-8TC datasheet, PDF - EEWORLD Datasheet

AP9B112-8TC: DescriptionCache SRAM, 128KX8, 8ns, CMOS, PDSO32; Categorystorage storage; File Size249KB，8 Pages; ManufacturerIntegrated Silicon Solution ( ISSI )

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AP9B112-8TC Overview

Cache SRAM, 128KX8, 8ns, CMOS, PDSO32

Parameter Name	Attribute value
Maker	Integrated Silicon Solution ( ISSI )
package instruction	,
Reach Compliance Code	unknown
ECCN code	3A991.B.2.B
Maximum access time	8 ns
JESD-30 code	R-PDSO-G32
memory density	1048576 bit
Memory IC Type	CACHE SRAM
memory width	8
Number of functions	1
Number of terminals	32
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	128KX8
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	GULL WING
Terminal location	DUAL

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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