S29GL512P12FFIR23 datasheet, PDF

S29GL512P12FFIR23: DescriptionFlash, 512MX1, 120ns, PBGA64, 13 X 11 MM, 1 MM PITCH, LEAD FREE, FBGA-64; Categorystorage storage; File Size3MB，80 Pages; ManufacturerCypress Semiconductor; Environmental Compliance

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S29GL512P12FFIR23 Overview

Flash, 512MX1, 120ns, PBGA64, 13 X 11 MM, 1 MM PITCH, LEAD FREE, FBGA-64

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Cypress Semiconductor
package instruction	13 X 11 MM, 1 MM PITCH, LEAD FREE, FBGA-64
Reach Compliance Code	compliant
ECCN code	3A991.B.1.A
Maximum access time	120 ns
JESD-30 code	R-PBGA-B64
JESD-609 code	e1
length	13 mm
memory density	536870912 bit
Memory IC Type	FLASH
memory width	1
Humidity sensitivity level	3
Number of functions	1
Number of terminals	64
word count	536870912 words
character code	512000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	512MX1
Package body material	PLASTIC/EPOXY
encapsulated code	LBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, LOW PROFILE
Parallel/Serial	PARALLEL
Programming voltage	3 V
Certification status	Not Qualified
Maximum seat height	1.4 mm
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	BALL
Terminal pitch	1 mm
Terminal location	BOTTOM
type	NOR TYPE
width	11 mm

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