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MR1122

Description
12 A, 200 V, SILICON, RECTIFIER DIODE, DO-4
CategoryDiscrete semiconductor    diode   
File Size151KB,3 Pages
ManufacturerDigitron
Websitehttp://www.digitroncorp.com
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MR1122 Overview

12 A, 200 V, SILICON, RECTIFIER DIODE, DO-4

MR1122 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerDigitron
Reach Compliance Codeunknow
Minimum breakdown voltage200 V
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JEDEC-95 codeDO-4
JESD-30 codeO-MUPM-D1
JESD-609 codee0
Maximum non-repetitive peak forward current300 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature190 °C
Minimum operating temperature-65 °C
Maximum output current12 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Maximum repetitive peak reverse voltage200 V
Maximum reverse current500 µA
Reverse test voltage200 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formSOLDER LUG
Terminal locationUPPER

MR1122 Related Products

MR1122 MR1120 MR1121 MR1123 MR1124 MR1125 MR1126 MR1128 MR1130
Description 12 A, 200 V, SILICON, RECTIFIER DIODE, DO-4 12 A, 50 V, SILICON, RECTIFIER DIODE, DO-4 12 A, 100 V, SILICON, RECTIFIER DIODE, DO-4 12 A, 300 V, SILICON, RECTIFIER DIODE, DO-4 12 A, 400 V, SILICON, RECTIFIER DIODE, DO-4 12 A, 500 V, SILICON, RECTIFIER DIODE, DO-4 12 A, 600 V, SILICON, RECTIFIER DIODE, DO-4 12 A, 800 V, SILICON, RECTIFIER DIODE, DO-4 12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow unknow unknow
Minimum breakdown voltage 200 V 50 V 100 V 300 V 400 V 500 V 600 V 800 V 1000 V
Shell connection CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1 V 1 V 1 V 1 V 1 V 1 V 1 V 1 V
JEDEC-95 code DO-4 DO-4 DO-4 DO-4 DO-4 DO-4 DO-4 DO-4 DO-4
JESD-30 code O-MUPM-D1 O-MUPM-D1 O-MUPM-D1 O-MUPM-D1 O-MUPM-D1 O-MUPM-D1 O-MUPM-D1 O-MUPM-D1 O-MUPM-D1
JESD-609 code e0 e0 e0 e0 e0 e0 e0 e0 e0
Maximum non-repetitive peak forward current 300 A 300 A 300 A 300 A 300 A 300 A 300 A 300 A 300 A
Number of components 1 1 1 1 1 1 1 1 1
Phase 1 1 1 1 1 1 1 1 1
Number of terminals 1 1 1 1 1 1 1 1 1
Maximum operating temperature 190 °C 190 °C 190 °C 190 °C 190 °C 190 °C 190 °C 190 °C 190 °C
Minimum operating temperature -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C
Maximum output current 12 A 12 A 12 A 12 A 12 A 12 A 12 A 12 A 12 A
Package body material METAL METAL METAL METAL METAL METAL METAL METAL METAL
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT
Maximum repetitive peak reverse voltage 200 V 50 V 100 V 300 V 400 V 500 V 600 V 800 V 1000 V
Maximum reverse current 500 µA 500 µA 500 µA 500 µA 500 µA 500 µA 500 µA 500 µA 500 µA
Reverse test voltage 200 V 50 V 100 V 300 V 400 V 500 V 600 V 800 V 1000 V
surface mount NO NO NO NO NO NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form SOLDER LUG SOLDER LUG SOLDER LUG SOLDER LUG SOLDER LUG SOLDER LUG SOLDER LUG SOLDER LUG SOLDER LUG
Terminal location UPPER UPPER UPPER UPPER UPPER UPPER UPPER UPPER UPPER
Maker Digitron Digitron Digitron Digitron - Digitron Digitron Digitron Digitron

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