EEWORLDEEWORLDEEWORLD

Part Number

Search

SSF11NS60

Description
Power Field-Effect Transistor, 11A I(D), 600V, 0.41ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size660KB,7 Pages
ManufacturerGood-Ark
Environmental Compliance
Suzhou Gotech is a complete and comprehensive manufacturer of design, manufacturing, packaging and sales in the domestic semiconductor discrete device diode industry. From the independent development of front-end chips to various packaging technologies of back-end finished products, it has formed a complete industrial chain. The main products include leadless integrated circuit products and discrete device products with the latest packaging technology, automotive rectifier diodes, power modules, rectifier diode chips, silicon rectifier diodes, switching diodes, Zener diodes, micro bridge piles, military fuses, photovoltaic bypass modules, etc., with a total of more than 50 series and more than 1,500 varieties. The products are widely used in many fields such as aerospace, automobiles, green lighting, IT, household appliances and power supply devices for large equipment. Design and develop silver paste for solar cells and various electronic pastes, and develop and mass produce various new sensors in the field of the Internet of Things.
Download Datasheet Parametric View All

SSF11NS60 Overview

Power Field-Effect Transistor, 11A I(D), 600V, 0.41ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN

SSF11NS60 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGood-Ark
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codecompliant
Other featuresHIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)281 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (ID)11 A
Maximum drain-source on-resistance0.41 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)44 A
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON

SSF11NS60 Preview

SSF11NS60
600V N-Channel MOSFET
Main Product Characteristics
V
DSS
R
DS
(on)
I
D
600V
0.36Ω (typ.)
11A
TO-220
Marking and Pin
Assignment
Schematic Diagram
Features and Benefits
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Lead free product
Description
The SSF11NS60 series MOSFET is a new technology, which combines an innovative super junction
technology and advance process.
This new technology achieves low R
DS(ON)
, energy saving, high
reliability and uniformity, superior power density and space saving.
Absolute Max Rating
Symbol
I
D
@ TC = 25°C
I
D
@ TC = 100°C
I
DM
P
D
@TC = 25°C
V
DS
V
GS
E
AS
I
AS
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V①
Continuous Drain Current, V
GS
@ 10V①
Pulsed Drain Current②
Power Dissipation③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=22.5mH
Avalanche Current @ L=22.5mH
Operating Junction and Storage Temperature Range
Max.
11
7
44
162
1.5
600
± 30
281
5
-55 to +150
W
W/°C
V
V
mJ
A
°C
A
Units
www.goodark.com
Page 1 of 7
Rev.1.2
SSF11NS60
600V N-Channel MOSFET
Thermal Resistance
Symbol
R
θJC
R
θJA
Characteristics
Junction-to-case③
Junction-to-ambient (t ≤ 10s)
Typ.
Max.
0.77
62
Units
℃/W
℃/W
Electrical Characteristics
@T
A
=25℃
Symbol
V
(BR)DSS
R
DS(on)
Parameter
Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Min.
600
2
Total gate charge
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
Rise time
Turn-Off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
unless otherwise specified
Typ.
0.36
0.88
2.46
Max.
0.41
4
1
50
100
-100
pF
ns
nC
Units
V
Ω
Conditions
V
GS
= 0V, ID = 250μA
V
GS
=10V,I
D
= 5.5A
T
J
= 125℃
V
V
DS
= V
GS
, I
D
= 250μA
T
J
= 125℃
μA
V
DS
=600V,V
GS
= 0V
T
J
= 125°C
V
GS
=30V
V
GS
= -30V
I
D
= 11A,
V
DS
=480V,
V
GS
= 10V
V
GS
=10V, VDS=300V,
R
L
=54.5Ω,
R
GEN
=4.7Ω
ID=5.5A
V
GS
= 0V
V
DS
= 50V
ƒ = 600KHz
V
GS(th)
Gate threshold voltage
I
DSS
Drain-to-Source leakage current
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate-to-Source forward leakage
nA
28.41
6.64
12.34
12.85
9.45
30.40
6.30
824.8
78.06
2.75
Source-Drain Ratings and Characteristics
Symbol
I
S
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
Typ.
Max.
11
Units
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
I
S
=11A, V
GS
=0V
T
J
= 25°C, I
F
=11A, di/dt =
100A/μs
I
SM
V
SD
t
rr
Q
rr
44
1.5
A
V
ns
uC
313
2.97
www.goodark.com
Page 2 of 7
Rev.1.2
SSF11NS60
600V N-Channel MOSFET
Test Circuits and Waveforms
Switch Waveforms:
Notes:
①The
maximum current rating is limited by bond-wires.
②Repetitive
rating; pulse width limited by max. junction temperature.
③The
power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The
value of
R
θJA
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤These
curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of T
J(MAX)
=150°C.
www.goodark.com
Page 3 of 7
Rev.1.2
SSF11NS60
600V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 1:
Power dissipation
Figure 2.
Typ. Gate to source cut-off voltage
Figure 3.
Typ. gate charge
Figure 4:
Typ. Capacitances
www.goodark.com
Page 4 of 7
Rev.1.2
SSF11NS60
600V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 5.
Drain-source breakdown voltage
Figure 6.
Drain-source on-state resistance
www.goodark.com
Page 5 of 7
Rev.1.2
BK3432 SDK Development and Use GuideBK3432 SDK Development and Use Guide
BK3432 SDK Development and Use Guide BK3432 SDK Development and Use GuideLow-power BLE4.2+3.0 dual-mode chip, suitable for electronic scales, POS machines, anti-lost devices, self-timers, remote contr...
无线大师 Integrated technical exchanges
[NXP Rapid IoT Review] UART0 Debug Serial Port-Debug Print Demo
[i=s]This post was last edited by yilonglucky on 2019-1-17 10:07[/i] There is a super simple project in the examples in the online IDE called Debug Print Demo. First, let’s analyze the schematic diagr...
yilonglucky RF/Wirelessly
Layout line width spacing routing teardrop vias [6 details to quickly improve the quality of PCB board layout]
PrefaceNowadays, many PCB Layout engineers complete the layout and routing according to the constraints given by hardware engineers or PI SI engineers, commonly known as "wire pullers" . If you don't ...
成都亿佰特 PCB Design
Help with LCD character set
How do you get the ASCII character set used when driving an LCD? How do you get the character set below? Do you calculate it yourself using the table?...
shijizai stm32/stm8
[GD32E503 Review] Snake Program Running
2.6 Snake appletAccording to the test plan, complete the Snake applet and run it on the GD32E503V-EVAL development board.2.6.1 Snake requirementsThe snake requirements are as follows:(1) The touch scr...
superstar_gu Domestic Chip Exchange
Discuss how to calculate the frequency of the sinusoidal signal collected by msp430
How to calculate the frequency of a sine signal is very confusing. I use msp430F449 to collect 250 data, and the sampling period follows the Nyquist theorem. The collected data is used to calculate th...
火辣西米秀 Microcontroller MCU

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

About Us Customer Service Contact Information Datasheet Sitemap LatestNews

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190

Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号