DDR DRAM, 32MX8, 0.7ns, CMOS, PBGA60, (8 X 14) MM, LEAD FREE,PLASTIC, FBGA-60
Parameter Name | Attribute value |
Is it lead-free? | Lead free |
Is it Rohs certified? | conform to |
Maker | Micron Technology |
Parts packaging code | BGA |
package instruction | TBGA, |
Contacts | 60 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
access mode | FOUR BANK PAGE BURST |
Maximum access time | 0.7 ns |
Other features | AUTO REFRESH |
JESD-30 code | R-PBGA-B60 |
JESD-609 code | e1 |
length | 14 mm |
memory density | 268435456 bit |
Memory IC Type | DDR DRAM |
memory width | 8 |
Number of functions | 1 |
Number of ports | 1 |
Number of terminals | 60 |
word count | 33554432 words |
character code | 32000000 |
Operating mode | SYNCHRONOUS |
Maximum operating temperature | 105 °C |
Minimum operating temperature | -40 °C |
organize | 32MX8 |
Package body material | PLASTIC/EPOXY |
encapsulated code | TBGA |
Package shape | RECTANGULAR |
Package form | GRID ARRAY, THIN PROFILE |
Peak Reflow Temperature (Celsius) | 260 |
Certification status | Not Qualified |
Maximum seat height | 1.2 mm |
Maximum supply voltage (Vsup) | 2.7 V |
Minimum supply voltage (Vsup) | 2.5 V |
Nominal supply voltage (Vsup) | 2.6 V |
surface mount | YES |
technology | CMOS |
Temperature level | INDUSTRIAL |
Terminal surface | Tin/Silver/Copper (Sn/Ag/Cu) |
Terminal form | BALL |
Terminal pitch | 1 mm |
Terminal location | BOTTOM |
Maximum time at peak reflow temperature | 30 |
width | 8 mm |