Synchronous DRAM, 4MX32, 5.4ns, CMOS, PDSO86, LEAD FREE, TSOP2-86
Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
Maker | Integrated Silicon Solution ( ISSI ) |
Parts packaging code | TSOP2 |
package instruction | SOP, TSSOP86,.46,20 |
Contacts | 86 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
access mode | FOUR BANK PAGE BURST |
Maximum access time | 5.4 ns |
Other features | AUTO/SELF REFRESH |
Maximum clock frequency (fCLK) | 166 MHz |
I/O type | COMMON |
interleaved burst length | 1,2,4,8 |
JESD-30 code | R-PDSO-G86 |
JESD-609 code | e3 |
length | 22.22 mm |
memory density | 134217728 bit |
Memory IC Type | SYNCHRONOUS DRAM |
memory width | 32 |
Humidity sensitivity level | 3 |
Number of functions | 1 |
Number of ports | 1 |
Number of terminals | 86 |
word count | 4194304 words |
character code | 4000000 |
Operating mode | SYNCHRONOUS |
Maximum operating temperature | 70 °C |
Minimum operating temperature | |
organize | 4MX32 |
Output characteristics | 3-STATE |
Package body material | PLASTIC/EPOXY |
encapsulated code | SOP |
Encapsulate equivalent code | TSSOP86,.46,20 |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | 260 |
power supply | 3.3 V |
Certification status | Not Qualified |
refresh cycle | 4096 |
Maximum seat height | 1.2 mm |
self refresh | YES |
Continuous burst length | 1,2,4,8,FP |
Maximum standby current | 0.001 A |
Maximum slew rate | 0.18 mA |
Maximum supply voltage (Vsup) | 3.6 V |
Minimum supply voltage (Vsup) | 3 V |
Nominal supply voltage (Vsup) | 3.3 V |
surface mount | YES |
technology | CMOS |
Temperature level | COMMERCIAL |
Terminal surface | Matte Tin (Sn) - annealed |
Terminal form | GULL WING |
Terminal pitch | 0.5 mm |
Terminal location | DUAL |
Maximum time at peak reflow temperature | 40 |
width | 10.16 mm |