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10A6

Description
10 A, 600 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size127KB,4 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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10A6 Overview

10 A, 600 V, SILICON, RECTIFIER DIODE

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10A05 SERIES
SILICON RECTIFIER
VOLTAGE
FEATURES
• High surge current capability
• Low leakage
• Low forward voltage drop
• High current capability
• Low lost
.360(9.1)
.340(8.6)
1.0(25.4)MIN.
.052(1.3)
.048(1.2)
50~1000 Volt
CURRENT
10 Ampere
P-600
Unit: inch(mm)
• Lead free in compliance with EU RoHS 2011/65/EU directive
MECHANICAL DATA
Case: Molded plastic, P600
1.0(25.4)MIN.
Terminals: Axial leads, solderable to MIL-STD-750,Method 2026
Polarity: Color Band denotes cathode end
Weight: 0.0719 ounce, 2.04 gram
.360(9.1)
.340(8.6)
MAXIMUM RATINGS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz resistive or inductive load.
For Capacitive load derate current by 20%.
PARAMETER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current : 8.3ms single half
sine-wave superimposed on rated load
Maximum Forward Voltage at 10A
Maximum DC Reverse Current at Rated DC
Blocking Voltage
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating and Storage Temperature Range
SYMBOL 10A05
V
RRM
V
RMS
V
DC
I
F
(
AV
)
I
FSM
V
F
I
R
R
JL
R
JA
C
J
T
J
,T
STG
50
35
50
10A1
100
70
100
10A2
200
140
200
10A4
400
280
400
10
400
1.1
10
6
16
100
10A6
600
420
600
10A8
800
560
800
10A10 UNITS
1000
700
1000
V
V
V
A
A
V
A
O
C/W
pF
O
-55 to +150
C
Note:1.Measured at 1 MHz and Applied Reverse Voltage of 4 Volt.
2.The testing condition of the thermal resistance (junction to ambient and junction to lead) is based on 0mm lead
length between two 10cm x 10cm x 0.5mm copper pad heatsinks.
January 7,2014-REV.00
PAGE . 1
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