SLVG3.3.TC datasheet, PDF - EEWORLD Datasheet

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SLVG3.3.TC: DescriptionTrans Voltage Suppressor Diode, 300W, Unidirectional, 1 Element, Silicon; CategoryDiscrete semiconductor diode; File Size257KB，4 Pages; ManufacturerSEMTECH; Websitehttp://www.semtech.com

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SLVG3.3.TC Overview

Trans Voltage Suppressor Diode, 300W, Unidirectional, 1 Element, Silicon

SLVG3.3.TC Parametric

Parameter Name	Attribute value
Maker	SEMTECH
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOW CAPACITANCE
Minimum breakdown voltage	4 V
Maximum clamping voltage	5.9 V
Configuration	SINGLE
Minimum diode capacitance	50 pF
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	R-PDSO-G4
Maximum non-repetitive peak reverse power dissipation	300 W
Number of components	1
Number of terminals	4
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
polarity	UNIDIRECTIONAL
Certification status	Not Qualified
Maximum reverse current	1 µA
surface mount	YES
technology	AVALANCHE
Terminal form	GULL WING
Terminal location	DUAL

SLVG3.3.TC Related Products

	SLVG3.3.TC	SLVG2.8.TG	SLVE2.8.TG	SLVG3.3.TG	SLVG3.3
Description	Trans Voltage Suppressor Diode, 300W, Unidirectional, 1 Element, Silicon	Trans Voltage Suppressor Diode, 300W, Unidirectional, 1 Element, Silicon	Trans Voltage Suppressor Diode, 300W, Bidirectional, 1 Element, Silicon,	Trans Voltage Suppressor Diode, 300W, Unidirectional, 1 Element, Silicon	Trans Voltage Suppressor Diode, 300W, 3.3V V(RWM), Unidirectional, 1 Element, Silicon,
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	LOW CAPACITANCE	LOW CAPACITANCE	LOW CAPACITANCE	LOW CAPACITANCE	LOW CAPACITANCE
Minimum breakdown voltage	4 V	3.3 V	3.3 V	4 V	4 V
Maximum clamping voltage	5.9 V	5.3 V	5.3 V	5.9 V	5.9 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum diode capacitance	50 pF	50 pF	100 pF	50 pF	50 pF
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
Maximum non-repetitive peak reverse power dissipation	300 W	300 W	300 W	300 W	300 W
Number of components	1	1	1	1	1
Number of terminals	4	4	4	4	4
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
polarity	UNIDIRECTIONAL	UNIDIRECTIONAL	BIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum reverse current	1 µA	1 µA	1 µA	1 µA	1 µA
surface mount	YES	YES	YES	YES	YES
technology	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL
Maker	SEMTECH	-	SEMTECH	SEMTECH	SEMTECH

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