DDR DRAM Module, 32MX64, 0.75ns, CMOS, SODIMM-200
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | Micron Technology |
| Parts packaging code | MODULE |
| package instruction | DIMM, |
| Contacts | 200 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| access mode | SINGLE BANK PAGE BURST |
| Maximum access time | 0.75 ns |
| Other features | AUTO/SELF REFRESH |
| JESD-30 code | R-XDMA-N200 |
| JESD-609 code | e0 |
| memory density | 2147483648 bit |
| Memory IC Type | DDR DRAM MODULE |
| memory width | 64 |
| Number of functions | 1 |
| Number of ports | 1 |
| Number of terminals | 200 |
| word count | 33554432 words |
| character code | 32000000 |
| Operating mode | SYNCHRONOUS |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 32MX64 |
| Package body material | UNSPECIFIED |
| encapsulated code | DIMM |
| Package shape | RECTANGULAR |
| Package form | MICROELECTRONIC ASSEMBLY |
| Peak Reflow Temperature (Celsius) | 235 |
| Certification status | Not Qualified |
| self refresh | YES |
| Maximum supply voltage (Vsup) | 2.7 V |
| Minimum supply voltage (Vsup) | 2.3 V |
| Nominal supply voltage (Vsup) | 2.5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | NO LEAD |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | 30 |
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