ST333C08LHK1 datasheet, PDF - EEWORLD Datasheet

ST333C08LHK1: DescriptionSilicon Controlled Rectifier, 1230A I(T)RMS, 620000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-200AC; CategoryAnalog mixed-signal IC Trigger device; File Size436KB，10 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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ST333C08LHK1 Overview

Silicon Controlled Rectifier, 1230A I(T)RMS, 620000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-200AC

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
package instruction	DISK BUTTON, O-CEDB-N2
Reach Compliance Code	compliant
Other features	HIGH SPEED
Shell connection	ISOLATED
Nominal circuit commutation break time	20 µs
Configuration	SINGLE
Maximum DC gate trigger current	200 mA
Maximum DC gate trigger voltage	3 V
Maximum holding current	600 mA
JEDEC-95 code	TO-200AC
JESD-30 code	O-CEDB-N2
JESD-609 code	e0
Maximum leakage current	50 mA
On-state non-repetitive peak current	11000 A
Number of components	1
Number of terminals	2
Maximum on-state current	620000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	DISK BUTTON
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum rms on-state current	1230 A
Maximum repetitive peak off-state leakage current	50000 µA
Off-state repetitive peak voltage	800 V
Repeated peak reverse voltage	800 V
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	NO LEAD
Terminal location	END
Maximum time at peak reflow temperature	NOT SPECIFIED
Trigger device type	SCR

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