BLF188XRU datasheet, PDF - EEWORLD Datasheet

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BLF188XRU: DescriptionRF Small Signal Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-4; CategoryDiscrete semiconductor The transistor; File Size1MB，15 Pages; ManufacturerAmpleon; Websitehttp://www.ampleon.com/; Environmental Compliance; Ampleon was founded in 2015, but has been leading the industry in RF power for more than 50 years. Looking to the future, the company hopes to make the world a better place by innovating with advanced LDMOS and GaN technologies in high-frequency applications. With more than 1,600 employees worldwide, Ampleon is committed to enabling its customers to successfully use its RF power products through close collaboration and partnerships, innovative capabilities and excellent execution. Its consistent and innovative product portfolio brings best-in-class products and solutions for 4G LTE and 5G NR infrastructure, industrial, scientific, medical, broadcast, aerospace and defense applications.

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BLF188XRU Overview

RF Small Signal Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-4

BLF188XRU Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Ampleon
package instruction	ROHS COMPLIANT, CERAMIC PACKAGE-4
Reach Compliance Code	unknown
ECCN code	EAR99
Factory Lead Time	26 weeks
Shell connection	SOURCE
Configuration	COMMON SOURCE, 2 ELEMENTS
Minimum drain-source breakdown voltage	135 V
FET technology	METAL-OXIDE SEMICONDUCTOR
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-CDFM-F4
Number of components	2
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Guideline	IEC-60134
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON

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