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2N5597

Description
Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, PNP, Silicon, TO-66, Metal, 2 Pin,
CategoryDiscrete semiconductor    The transistor   
File Size85KB,1 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

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2N5597 Overview

Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, PNP, Silicon, TO-66, Metal, 2 Pin,

2N5597 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
package instructionFLANGE MOUNT, O-MBFM-P2
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)2 A
Collector-emitter maximum voltage60 V
Minimum DC current gain (hFE)70
JEDEC-95 codeTO-66
JESD-30 codeO-MBFM-P2
JESD-609 codee0
Number of terminals2
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
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