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TRU2AM

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size32KB,2 Pages
ManufacturerTIANJIN ZHONGHUAN SEMICONDUCTOR
Download Datasheet Parametric View All

TRU2AM Overview

Rectifier Diode,

TRU2AM Parametric

Parameter NameAttribute value
MakerTIANJIN ZHONGHUAN SEMICONDUCTOR
Reach Compliance Codeunknown
ECCN codeEAR99

TRU2AM Preview

TRU2AM
快恢復整流二極管
Fast Recovery Rectifier Diodes
特徵
Features
1.1A
I
F
AV
600V
V
RRM
t
rr
②≤0.4μs
t
rr
①≤0.18μs,
高可靠性
High reliability
用途
外½尺寸和印記
Outline Dimensions and Mark
單½
Unit:mm
Applications
負極標誌
Cathode Mark
型號
Type
Φ4.0±0.2
Φ0.8±0.05
快速整流用
High speed switching
25.4min
25.4min
7.5±0.2
極限值(絕對最大額定值)
Limiting Values(Absolute Maximum Rating)
參數名稱
Item
反向重復峰值電壓
Repetitive Peak Reverse Voltage
反向工½峰值電壓
Peak Working Reverse Voltage
反向不重復峰值電壓
Non-Repetitive Peak Reverse Voltage
正向平均電流
Average Forward Current
正向(不重復)浪湧電流
Surge(Non-repetitive)Forward Current
结温和貯存溫度
Junction and Storage Temperature
工½環境溫度
Operating Ambient Temperature
符號
單½
Symbol Unit
V
RRM
V
RWM
V
RSM
I
F(AV)
I
FSM
T
j
T
stg
T
a
V
V
V
A
A
1.1
20
TRU2AM
600
600
660
(正弦半波 50H
Z
,電阻負載,T
break
=50℃)
(50H
Z
Half-sine wave, Resistance load,T
break
=50℃)
(正弦半波 50H
Z
,一個周期,T
a
=25℃)
(50H
Z
Half-sine wave,1 cycle,T
a
=25℃)
-40 ~ +150
-40 ~ +150
電特性
(T
a
=25℃
除非另有規定)
Electrical Characteristics
(T
a
=25℃ Unless otherwise specified)
參數名稱
符號 單½
測試條件
Item
Symbol Unit
Test Condition
正向峰值電壓
V
I
FM
=1.1A
V
FM
Peak Forward Voltage
T
a
=25℃
I
RRM1
反向峰值電流
μA
V
RM
=V
RRM
Peak Reverse Current
T
a
=100℃
I
RRM2
I
F
=0.5A I
R
=1A
t
rr
I
RR
=0.25A
反向恢復時間
μs
Reverse Recovery Time
I
F
=10mA I
R
=10mA
t
rr
I
RR
=0.1I
R
熱阻(典型)
Thermal Resistance
(Typical)
R
θ
J-A
℃/W
R
θ
J-L
結和环境之間
Between junction and ambient
結和引線之間
Between junction and lead
最大值
Max
1.2
10
100
0.18
0.4
30
15
天津中環半導體股½有限公司
TIANJIN ZHONGHUAN SEMICONDUCTOR JOINT-STOCK CO.,LTD.
1
TRU2AM
■特性曲綫(典型)
Characteristics(Typical)
10
I
RRM
(μA)
100
I
FM
(A)
T
a
=100℃
1.0
10
1.0
T
a
=25℃
0.1
0.1
T
a
=100℃
T
a
=25℃
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
FM
(V)
0.01
0
200
400
600
800
1000
V
RM
(V)
正向特性
Forward Characteristics
1.5
I
F
AV
(A)
I
FSM
(A)
24
20
16
12
0.6
8
0.3
0
4
0
T
a
(℃)
1
反向特性
Reverse Characteristics
正弦波sine
wave
I
FSM
10ms 10ms
1cycle
不重復
non-repetitive
T
a
=25℃
1.2
0
0.9
10
正向平均電流降額曲綫
I
F
AV
—T
a
Derating
耐正向浪湧電流½力
Surge Forward Current Capability
100
周波數
Number of Cycles
I
D
I
F
R
L
I
RR
I
R
t
rr
t
V
R
I
F
反向恢復時間
t
rr
試驗電路及測試波½示意圖
Diagram of Circuit and Testing Wave form of Reverse Recovery Time t
rr
天津中環半導體股½有限公司
TIANJIN ZHONGHUAN SEMICONDUCTOR JOINT-STOCK CO.,LTD.
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