Standard SRAM, 4KX4, 55ns, CMOS, CDIP20, 0.300 INCH, HERMETIC SEALED, CERAMIC, DIP-20
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Maker | AMD |
Parts packaging code | DIP |
package instruction | DIP, DIP20,.3 |
Contacts | 20 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Maximum access time | 55 ns |
Other features | AUTOMATIC POWER-DOWN |
I/O type | COMMON |
JESD-30 code | R-GDIP-T20 |
JESD-609 code | e0 |
length | 24.257 mm |
memory density | 16384 bit |
Memory IC Type | STANDARD SRAM |
memory width | 4 |
Number of functions | 1 |
Number of ports | 1 |
Number of terminals | 20 |
word count | 4096 words |
character code | 4000 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 70 °C |
Minimum operating temperature | |
organize | 4KX4 |
Output characteristics | 3-STATE |
Exportable | NO |
Package body material | CERAMIC, GLASS-SEALED |
encapsulated code | DIP |
Encapsulate equivalent code | DIP20,.3 |
Package shape | RECTANGULAR |
Package form | IN-LINE |
Parallel/Serial | PARALLEL |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
power supply | 5 V |
Certification status | Not Qualified |
Maximum seat height | 5.08 mm |
Minimum standby current | 2 V |
Maximum supply voltage (Vsup) | 5.25 V |
Minimum supply voltage (Vsup) | 4.75 V |
Nominal supply voltage (Vsup) | 5 V |
surface mount | NO |
technology | CMOS |
Temperature level | COMMERCIAL |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | THROUGH-HOLE |
Terminal pitch | 2.54 mm |
Terminal location | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED |
width | 7.62 mm |