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APTM50DHM75T

Description
Power Field-Effect Transistor, 46A I(D), 500V, 0.075ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-14
CategoryDiscrete semiconductor    The transistor   
File Size301KB,6 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

APTM50DHM75T Overview

Power Field-Effect Transistor, 46A I(D), 500V, 0.075ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-14

APTM50DHM75T Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMicrosemi
Parts packaging codeMODULE
package instructionMODULE-14
Contacts14
Reach Compliance Codeunknown
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)2500 mJ
Shell connectionISOLATED
ConfigurationPARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Minimum drain-source breakdown voltage500 V
Maximum drain current (Abs) (ID)46 A
Maximum drain current (ID)46 A
Maximum drain-source on-resistance0.075 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-XUFM-X14
JESD-609 codee0
Number of components2
Number of terminals14
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)357 W
Maximum pulsed drain current (IDM)184 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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