Power Field-Effect Transistor, 46A I(D), 500V, 0.075ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-14
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Maker | Microsemi |
Parts packaging code | MODULE |
package instruction | MODULE-14 |
Contacts | 14 |
Reach Compliance Code | unknown |
Other features | AVALANCHE RATED |
Avalanche Energy Efficiency Rating (Eas) | 2500 mJ |
Shell connection | ISOLATED |
Configuration | PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
Minimum drain-source breakdown voltage | 500 V |
Maximum drain current (Abs) (ID) | 46 A |
Maximum drain current (ID) | 46 A |
Maximum drain-source on-resistance | 0.075 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code | R-XUFM-X14 |
JESD-609 code | e0 |
Number of components | 2 |
Number of terminals | 14 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Package body material | UNSPECIFIED |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | N-CHANNEL |
Maximum power dissipation(Abs) | 357 W |
Maximum pulsed drain current (IDM) | 184 A |
Certification status | Not Qualified |
surface mount | NO |
Terminal surface | TIN LEAD |
Terminal form | UNSPECIFIED |
Terminal location | UPPER |
Maximum time at peak reflow temperature | NOT SPECIFIED |
transistor applications | SWITCHING |
Transistor component materials | SILICON |