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MSMLG30A

Description
3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB
CategoryDiscrete semiconductor    diode   
File Size483KB,8 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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MSMLG30A Overview

3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB

MSMLG30A Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeDO-215AB
package instructionR-PDSO-G2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Maximum breakdown voltage36.8 V
Minimum breakdown voltage33.3 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-215AB
JESD-30 codeR-PDSO-G2
JESD-609 codee0
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation3000 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation1.61 W
GuidelineMIL-19500
Maximum repetitive peak reverse voltage30 V
surface mountYES
technologyAVALANCHE
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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